Universal electric-field-driven resistive transition in narrow-gap Mott insulators.
نویسندگان
چکیده
A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.
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ورودعنوان ژورنال:
- Advanced materials
دوره 25 23 شماره
صفحات -
تاریخ انتشار 2013